Silicon carbide field-effect transistor (SiC MOSFET)

Silicon carbide field-effect transistor (SiC MOSFET)
The emergence and widespread application of SiC MOSFETs have brought a profound technological revolution to the power semiconductor and power electronics industries. The excellent characteristics of SiC MOSFET in terms of on resistance, switching loss, high-temperature operation, and thermal conductivity greatly improve the conversion efficiency and power density of power electronic systems, and reduce the overall cost of the system. Therefore, in automotive applications, industrial applications, communication power supplies, and data centers, SiC MOSFETs are gradually replacing traditional silicon-based power devices. Painjie Semiconductor has mass-produced discrete device products on multiple voltage platforms including 650V, 1200V, and 1700V, and has a complete product catalog in different current carrying capacities and packaging forms, providing customers with a comprehensive range of choices.