Product Details
Gallium Nitride Transistor (GaN HEMT)
Due to the extremely low heat generation rate and high breakdown field strength of gallium nitride materials, GaN HEMTs, power devices based on gallium nitride, have minimal conduction voltage drop and switching loss. This allows GaN HEMT based switching power supplies to operate at switching frequencies exceeding 1MHz, using small-sized energy storage components to achieve extremely high power density. Therefore, GaN HEMTs have a wide range of applications in the fields of consumer electronics and IT power supply.
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