Silicon carbide diode (SiC SBD)
The reverse recovery charge of SiC SBD (silicon carbide Schottky diode) is much smaller than that of similar silicon diodes, and SiC SBD can operate at higher junction temperatures. Therefore, SiC SBD can significantly reduce reverse recovery losses and switching noise in switching power supplies, improve the conversion efficiency, overall power density, and reliability of switching power supplies. The excellent characteristics of SiC SBD can significantly reduce the overall cost of power electronic systems.
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